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PDF ZXGD3104N8 Data sheet ( Hoja de datos )
| Número de pieza | ZXGD3104N8 | |
| Descripción | SYNCHRONOUS MOSFET CONTROLLER | |
| Fabricantes | Diodes | |
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Description
The ZXGD3104 is intended to drive MOSFETs configured as ideal
diode replacements. The device is comprised of a differential amplifier
detector stage and high current driver. The detector monitors the
reverse voltage of the MOSFET, such that if the body diode
conduction occurs, a positive voltage is applied to the MOSFET’s Gate
Pin.
Once the positive voltage is applied to the Gate, the MOSFET
switches on. The detector’s output voltage is then proportional to the
MOSFET Drain-Source voltage, and this is applied to the Gate via the
driver. This action provides a rapid MOSFET turn-off at zero Drain
current.
ZXGD3104N8
SYNCHRONOUS MOSFET CONTROLLER IN SO8
Features
5-25V VCC Range
Operating up to 250kHz
Suitable for Discontinuous Conduction Mode (DCM), Critical
Conduction Mode (CrCM), and Continuous Conduction Mode
(CCM) Operation
Turn-Off Propagation Delay 15ns and Turn-Off Time 20ns
Proportional Gate Drive Control
Detector Threshold Voltage -10mV
Standby Current 5mA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Flyback Converters in:
≥90W Laptop Adaptors
Typical Configuration
Mechanical Data
Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish – Solderable per MIL-STD-202,
Method 208
Weight: 0.074 grams (Approximate)
SO-8
DNC
REF
GATEL
GATEH
DRAIN
BIAS
GND
VCC
Top View
Pin-Out
Ordering Information (Note 4)
Product
ZXGD3104N8TC
Marking
ZXGD3104
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD3104N8
Document Number DS35546 Rev. 2 - 2
ZXGD
3104
YY WW
ZXGD
3104
YY
WW
= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 11 = 2011)
= Week (01 - 53)
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www.diodes.com
November 2015
© Diodes Incorporated
1 page  
ZXGD3104N8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
VCC = 19V; RBIAS = 6.3kΩ; RREF = 8.5kΩ
Characteristic
Input and Supply
Quiescent Current
Gate Driver
Turn-Off Threshold Voltage (Notes 10 & 11)
(Notes 10 & 11)
Gate Output Voltage
(Notes 10 & 12)
Symbol
IQ
VT
VG(off)
VG
Switching Performance for QG(tot) = 124nC (Note 13)
Turn-On Propagation Delay
td(rise)
Turn-Off Propagation Delay
td(fall)
Gate Rise Time
tr
Gate Fall Time
tf
Min
—
-16
0
12.5
17
175
11
335
530
35
Typ
5.16
-10
0.73
14
18
250
15
480
760
50
Max
—
0
1.0
VCC
VCC
325
20
625
990
65
Notes:
10. GATEH connected to GATEL
11. RH = 100kΩ, RL = O/C
12. RL = 100kΩ, RH = O/C
13. Refer to test circuit below.
Unit
Test Condition
mA VD ≥ 0V
mV VG = 1V
VD ≥ 1V
V VD = -50mV
VD = -100mV
—
Refer to Switching
ns From 10% of VG to 10V Waveforms in Fig. 1
From 10% to 90% of VG
Continuous Conduction Mode
Test Circuit
ZXGD3104N8
Document Number DS35546 Rev. 2 - 2
5 of 13
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November 2015
© Diodes Incorporated
5 Page 
ZXGD3104N8
Application Information (Cont.)
Design Considerations
It is advisable to decouple the ZXGD3104 closely to VCC and ground due to the possibility of high peak gate currents with a 1μF X7R type ceramic
capacitor C1 as shown in Figure 2. Also the Ground return loop should be as short as possible.
To minimize parasitic inductance-induced premature turn-off of the synchronous controller, always keep the PCB track length between
ZXGD3104’s Drain input and the MOSFET’s Drain to less than 10mm. Low internal inductance SMD MOSFET packages are also recommended
for high switching frequency power conversion to minimize MOSFET body diode conduction loss.
The Gate Pins should be as close to the MOSFET’s gate as possible. External gate resistors are optional. They can be inserted to control the rise
and fall time which may help with EMI issues.
The careful selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value for resistor RREF and RBIAS
from Table 1 based on the desired VCC value. This provides the typical ZXGD3104’s detection threshold voltage of -10mV.
Table 1: Recommended Resistor Values for Various Supply Voltages
VCC
RBIAS
RREF
5V
1.6kΩ
2kΩ
10V
3.3kΩ
4.3kΩ
12V
3.9kΩ
5.1kΩ
15V
5.1kΩ
6.8kΩ
19V
6.3kΩ
8.5kΩ
ZXGD3104N8
Document Number DS35546 Rev. 2 - 2
11 of 13
www.diodes.com
November 2015
© Diodes Incorporated
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