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PDF DMP3017SFGQ Data sheet ( Hoja de datos )

Número de pieza DMP3017SFGQ
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMP3017SFGQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
-30V
RDS(ON) Max
10m@ VGS = -10V
18mΩ @ VGS = -4.5V
ID Max
TA = +25°C
-11.5A
-8.7A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Features and Benefits
Low RDS(ON) Ensures On-State Losses Are Minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Applications
Backlighting
Power Management Functions
DC-DC Converters
ESD PROTECTED
Top View
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI3333-8
S Pin 1
S
S
G
G
D
D
D
D
D
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMP3017SFGQ-7
DMP3017SFGQ-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
POWERDI is a registered trademark of Diodes Incorporated.
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated

1 page




DMP3017SFGQ pdf
3.0
2.8
2.6
2.4
2.2
2.0 -ID = 1mA
1.8
-ID = 250µA
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
1000
Ciss
Coss
Crss
f = 1MHz
100
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
100
RDS(on)
Limited
30
10
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
0.1
PW = 1ms
PW = 100µs
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMP3017SFGQ
30
25
20
TA= 25C
15
10
5
0
0 0.3 0.6 0.9 1.2 1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
9
VDS = -15V
ID = -1.5A
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
DMP3017SFGQ
Document number: DS38181 Rev. 1 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated

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