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PDF DMP4015SK3Q Data sheet ( Hoja de datos )

Número de pieza DMP4015SK3Q
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Green DMP4015SK3Q
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-40V
RDS(ON) Max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TC = +25°C
-35A
-30A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
D
Top View
D
GS
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Part Number
DMP4015SK3Q-13
Compliance
Automotive
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMP4015SK3Q
Document number: DS36665 Rev. 4 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated

1 page




DMP4015SK3Q pdf
2.4
2
1.6
1.2
0.8
0.4
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
Ciss
1000
Coss
C rss
DMP4015SK3Q
30
25
20
15
10
5
0
0
10000
0.2 0.4 0.6 0.8 1 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
TA =150°C
1000
100
TA =125°C
TA =85°C
10
TA =25°C
1
100
0
10
5 10 15 20 25
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
30
8
6
4
2
0
0 20 40 60 80 100 120
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
0.1
0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
90
80
70
Single Pulse
RJA = 72°C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA
60
50
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
DMP4015SK3Q
Document number: DS36665 Rev. 4 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated

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