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Número de pieza | DMG1013UWQ | |
Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMG1013UWQ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
DMG1013UWQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
Drain
D
Gate
ESD PROTECTED
Top View
Gate
Protection
Diode
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
DMG1013UWQ-7
DMG1013UWQ-13
Case
SOT323
SOT323
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PA1
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
…
…
Feb
2
2015
C
Mar
3
2016
D
Apr
4
2017
E
May
5
2018
F
Jun
6
2019
G
Jul
7
2020
H
Aug
8
2021
I
Sep
9
2022
J
Oct
O
2023
K
Nov
N
2024
L
Dec
D
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
1 of 7
www.diodes.com
January 2016
© Diodes Incorporated
1 page 1
D=0.7
D=0.5
D=0.3
D=0.9
DMG1013UWQ
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
0.001
RθJA (t)=r(t) * RθJA
RθJA=380℃/W
Duty Cycle, D=t1/t2
0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
100
1000
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMG1013UWQ.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMG1013UW | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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