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PDF DMN2400UFB Data sheet ( Hoja de datos )

Número de pieza DMN2400UFB
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
V(BR)DSS
20V
RDS(ON) max
0.55Ω @ VGS = 4.5V
0.75Ω @ VGS = 2.5V
ID max
TA = +25°C
0.75A
0.63A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power-management applications.
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
X1-DFN1006-3
DMN2400UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected up to 1.5kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: Collector Dot
Terminals: Finish NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)
Drain
ESD PROTECTED TO 1.5kV
Bottom View
S
D
G
Top View
Package Pin Configuration
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMN2400UFB-7
X1-DFN1006-3
3,000/Tape & Reel
DMN2400UFB-7B
X1-DFN1006-3
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2400UFB
Document number: DS31963 Rev. 6 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated

1 page




DMN2400UFB pdf
DMN2400UFB
1.2
1.0
0.8 ID = 1mA
ID = 250µA
0.6
1.6
1.2
0.8
TA = 25°C
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
60
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
5
50 f = 1MHz
40
Ciss
30
20
4
VDS = 10V
ID = 250mA
3
2
10 Coss
0 Crss
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
1
D = 0.7
D = 0.5
D = 0.3
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.9
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
RJA(t) = r(t) * RJA
RJA = 253°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
10 100 1,000
DMN2400UFB
Document number: DS31963 Rev. 6 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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