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PDF DMN1016UCB6 Data sheet ( Hoja de datos )

Número de pieza DMN1016UCB6
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN1016UCB6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
12V
RDS(ON)
20mΩ @ VGS = 4.5V
23mΩ @ VGS = 2.5V
ID
TA = +25°C
6.6A
6.1A
Features and Benefits
Low QG & QGD
Small Footprint
Low Profile 0.62mm Height
Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Battery Management
Load Switch
Battery Protection
Mechanical Data
Case: U-WLB1510-6
Terminal Connections: See Diagram Below
Terminals: Finished SnAgCu Ball
Weight: 0.0018 grams (Approximate)
U-WLB1510-6
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN1016UCB6-7
Case
U-WLB1510-6
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1510-6
PW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 7
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
October 2016
© Diodes Incorporated

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DMN1016UCB6 pdf
DMN1016UCB6
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.00001 0.0001
RJA(t) = r(t) * RJA
RJA = 125°C/W
Duty Cycle, D = t1/ t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100 1000
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
5 of 7
www.diodes.com
October 2016
© Diodes Incorporated

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