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Número de pieza | DMS3017SSD | |
Descripción | ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMS3017SSD (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(on) – minimizes conduction loss
• Low VSD – reducing the losses due to body diode
construction
• Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Top View
Q1 Q2
D2 G2 D1 D2
D2 S2/D1
G1 S2/D1
S1 S2/D1
Top View
Internal Schematic
G1 G2
S1
N-Channel MOSFET +
Integrated Schottky Diode
S2
N-Channel MOSFET
Ordering Information (Note 3)
Notes:
Part Number
DMS3017SSD-13
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
Top View
8
5
S3017SD
YY WW
14
Logo
Part no.
Week: 01 ~ 53
Year: “09” = 2009
1 of 10
www.diodes.com
October 2010
© Diodes Incorporated
1 page 1,000
Ciss
100
Coss
Crss
f = 1MHz
10
0
10
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
8
6
VDS = 15V
ID = 10A
4
2
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMS3017SSD
10,000
1,000
100
TA = 150°C
TA = 125°C
TA = 85°C
10
TA = 25°C
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
5 of 10
www.diodes.com
October 2010
© Diodes Incorporated
5 Page |
Páginas | Total 10 Páginas | |
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