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PDF 4N60S Data sheet ( Hoja de datos )
| Número de pieza | 4N60S | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | HAOHAI | |
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4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
工业型号
FQU4N60
FQD4N60
公司型号 通俗命名
H
H4N60I
H4N60S
4N60 HAOHAI
封装
标识
N-Channel Power Field Effect Transistoe 英文与中文简体版本
无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
TO-251 TO-252
IS
包装规格
TO-251管装
TO-252盘装
每管数量 每盒数量
80Pcs 4000Pcs
每卷2.5K 5000Pcs
每箱数量
40000Pcs
50000Pcs
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode
with fast recovery time.
Designed for high voltage, high speed switching applications such
as power suplies, converters, power motor controls and bridge circuits.
Features
■Higher Current Rating
■Lower RDS(on)
■Lower Capacitances
■Lower Total Gate Charge
■Tighter VSD Specifications
■Avalanche Energy Specified
产品特点及应用范围：4N60型硅N沟道VDMOS功率晶体管，主要
用于开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、各种
充电器、整流器、逆变器、控制器、转换器、风扇控制板、以及电源适
配器、汽车稳压器等线性放大和功率开关电路。其特点如下：
● 开关速度快 ● 驱动简单
● 可并联使用 ● 通态电阻低
● 封装形式：TO-251（IPAK）；TO-252（DPAK）
4N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
2
3
1
3-Lead Plastic TO-252
Package Code: S
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
4N60 Series
Symbol:
■Absolute Maximum Ratings
Symbol
Parameter
ID
IDM
VGSS
PD
Drain to Current (Continuous)(TC=25°C)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Power Dissipation (TA=25°C) *
Power Dissipation (TC=25°C) *
Power Dissipation - Derate above 25°C
Tj, Tstg
Operating and Storage Temperature Range
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
■Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction to Ambient
Value
4
15
±30
3.13
130
1.04
-55～+150
460
300
Units
A
V
W
W/°C
°C
mJ
°C
Typ Max
Units
-- 0.96
-- 40 W/°C
-- 62.5
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
Page No.: 1/5
4N60 TO-251 & TO-252
1 page  
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】
N-Channel Power Field Effect Transistoe 英文与中文简体版本
无铅产品提供SGS环保认证, 符合欧美RoHS环保指令标准
器件封装相关环保指标 有害物质或元素
部件名称
铅(Pb)
汞(Hg)
镉(Cd)
六价铬[Cr(VI)] 多溴联苯(PBB) 多溴苯醚（PBDE）
引线框
○
○
○
○
○
塑封树脂
○
○
○
○
○
管芯
○
○
○
○
○
内引线
○
○
○
○
○
焊料
╳
○
○
○
○
说明
○：表示该有毒有害物质的含量在 SJ/T11363-2006 标准的限量要求以下。
╳：表示该有毒有害物质的含量超出 SJ/T11363-2006 标准的限量要求。
目前产品的焊料中含有铅（Pb）成分，但属于欧盟 ROHS 指令豁免范围。
○
○
○
○
○
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL - Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak Temperature (tP)
Ramp-down Rate
Time 25℃ to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3°C/sec
100°C
150°C
60~120 sec
<3°C/sec
183°C
60~150 sec
240°C +0/-5°C
10~30 sec
<6℃/sec
<6 minutes
Pb-Free Assembly
<3°C/sec
150°C
200°C
60~180 sec
<3°C/sec
217°C
60~150 sec
260°C +0/-5°C
20~40 sec
<6°C/sec
<8 minutes
Peak temperature
245°C ±5°C
260°C +0/-5°C
Dipping time
5sec ±1sec
5sec ±1sec
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
Page No.: 5/5
4N60 TO-251 & TO-252
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 4N60S.PDF ] | |
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