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Número de pieza | FQD4N60 | |
Descripción | 600V 4A N-Channel MOSFET | |
Fabricantes | Oucan Semi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQD4N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FQD4N60/FQI4N60/FQU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The FQD4N60 & FQI4N60 & FQU4N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150℃
4A
< 2.3Ω
TO252
DPAK
Top View
Bottom View
DD
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
G
S
S
D
G
G
D
S
S
D
G
AOD4N60
AOI4N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOU4N60
Maximum
600
±30
4
2.6
14
2.8
118
235
50
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
43
-
1
Maximum
55
0.5
1.2
G
SD G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
1 page FQD4N60/FQI4N60/FQU4N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
0
25 50 75 100
TCASE (°C)
Figure 12: Power De-rating (Note B)
125
150
5
4
3
2
1
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
500
400
300
200
100
0
0.001
TJ(Max)=150°C
TA=25°C
0.01
0.1 1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
10000
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FQD4N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQD4N60 | 600V 4A N-Channel MOSFET | Oucan Semi |
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