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PDF HMC952 Data sheet ( Hoja de datos )

Número de pieza HMC952
Descripción GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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No Preview Available ! HMC952 Hoja de datos, Descripción, Manual

Typical Applications
The HMC952 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• SATCOM
Functional Diagram
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Features
+35 dBm Pout @ 28% PAE
High Output IP3: +42 dBm
High Gain: 36 dB
DC Supply: +6V @ 1400 mA
No External Matching Required
Die Size: 3.46 x 1.73 x 0.1 mm
General Description
The HMC952 is a four-stage GaAs pHEMT MMIC 2
Watt Power Amplifier with an integrated temperature
compensated on-chip Power Detector which operates
between 9 and 14 GHz. The HMC952 provides 36 dB
of gain and +35 dBm of saturated output power at 28%
PAE from a +6V power supply. The HMC952 exhibits
excellent linearity and is optimized for high capacity
Point-to-Point and Point-to-Multi-Point Radio systems.
The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification
preceding the antenna. All data is taken with the chip
in a 50 Ohm test fixture connected via (2) 0.025 mm
(1 mil) diameter wire bonds of 0.31mm (12 mil) length.
VEdledc1,trVidcda2l ,SVpded3c,ifVicdda4ti,oVndsd,5T=A
= +25° C,
+6V, Idd =
1400
mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Measurement taken at Pout / Tone = +20 dBm
Min.
34
31
Typ.
9 - 10
37
0.04
12
8
34
35
41
1400
Max.
Min.
Typ.
Max.
Units
10 - 14
GHz
33 36
dB
0.04
dB/ °C
16 dB
12 dB
31.5 34.5
dBm
35 dBm
42.5
dBm
1400
mA
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rights of third
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HMC952 pdf
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Power Compression @ 11.5 GHz
40
35
30
25
20
15
10
5
0
-20 -15 -10
-5
0
INPUT POWER (dBm)
3200
2800
2400
2000
1600
1200
Idd 800
Pout
Gain
PAE
400
0
5
Detector Voltage vs. Frequency &
Temperature
10
1
0.1
0.01
10 GHz +25C
10 GHz +85C
10 GHz -40C
12 GHz +25C
12 GHz +85C
12 GHz -40C
0.001
-10 -6 -2
2 6 10 14 18 22 26 30 34
OUTPUT POWER (dBm)
Gain & Power vs.
Supply Current @ 11.5 GHz
40
36
32
GAIN
28 P1dB
Psat
24
20
1000
1050
1100
1150 1200 1250
Idd (mA)
1300
1350
1400
Power Compression @ 13.5 GHz
40
35
30
25
20
15
10
5
0
-20 -15 -10
-5
0
INPUT POWER (dBm)
3200
2800
2400
2000
1600
1200
Idd 800
Pout
Gain
PAE
400
0
5
Reverse Isolation vs. Temperature
0
-10 +25C
-20
+85C
-55C
-30
-40
-50
-60
-70
-80
-90
11 12 13 14 15 16
FREQUENCY (GHz)
17
Gain & Power vs.
Supply Voltage @ 11.5 GHz
40
36
32
28
GAIN
P1dB
Psat
24
20
5
5.2 5.4 5.6
Vdd (V)
5.8
6
InfoFrmoartiopn rfiucrneis,heddeblyivAenarlyogaDnedvicetos ispblaelcieevedotrodbeersac:cuHraittetiatned Mreliiacbrleo. wHoawveeverC, noorpoForar tpioricne,, 2deElilvizerayb, eanthd Dtorpivlaec,eCohrdeelrms:sAfonradlo,gMDAevi0c1e8s,2I4nc.,
5 responsibility
rights of third
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9106

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HMC952 arduino
HMC952
v02.0813
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 9 - 14 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
0.076mm
(0.003”)
Wire Bond
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
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11 responsibility
rights of third
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9106

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