|
|
PDF 2SA2079 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2079 | |
| Descripción | Silicon PNP epitaxial planar type Power Transistors | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SA2079 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
–45
–45
–7
–100
–200
100
125
–55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3D
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = –10 µA, IE = 0
IC = –2 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCB = –10 V, IE = 1 mA, f = 200 MHz
VCB = –10 V, IE = 0, f = 1 MHz
–45
–45
–7
180
– 0.2
80
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
– 0.1
–100
390
– 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Publication date : December 2004
SJC00326AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA2079.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SA2070 | Silicon PNP Epitaxial Type Transistor |  Toshiba Semiconductor |
| 2SA2071 | Middle Power transistor |  ROHM Semiconductor |
| 2SA2071P5 | Power transistor | ROHM Semiconductor |
| 2SA2072 | High voltage discharge / High speed switching / Low Noise | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |