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PDF CA5470 Data sheet ( Hoja de datos )

Número de pieza CA5470
Descripción Quad/ 14MHz/ Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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CA5470
November 1996
Quad, 14MHz, Microprocessor BiMOS-E
Operational Amplifier with MOSFET Input/Bipolar Output
Features
Description
• High Speed CMOS Input Stage Provides
- Very High ZI. . . . . . . . . . . . . . . . 5T(5 x 1012) (Typ)
- Very Low lI. . . . . . . . . . . 0.5pA (Typ) at 5V Operation
- Very Low IIO . . . . . . . . . 0.5pA (Typ) at 5V Operation
• ESD Protection to 2000V
• 3V to 16V Power Supply Operation
• Fully Guaranteed Specifications Over Full Military
Range
• Wide BW (14MHz); High SR (5V/µs) at 5V Supply
• Wide VlCR Range From -0.5V to 3.7V (Typ) at 5V Supply
• Ideally Suited for CMOS and HCMOS Applications
Applications
• Bar Code Readers
• Photodiode Amplifiers (IR)
• Microprocessor Buffering
• Ground Reference Single Supply Amplifiers
• Fast Sample and Hold
• Timers
• Voltage Controlled Oscillators
• Voltage Followers
• V to l Converters
• Peak Detectors
• Precision Rectifiers
• 5V Logic Systems
• 3V Logic Systems
The CA5470 is an operational amplifier that combines the
advantages of both high speed CMOS and bipolar transistors
on a single monolithic chip. It is constructed in the BiMOS-E
process which adds drain-extension implants to 3µm polygate
CMOS, enhancing both the voltage capability and providing
vertical bipolar transistors for broadband analog/digital func-
tions. This process lends itself easily to high speed operational
amplifiers, comparators, analog switches and interface periph-
erals, resulting in twice the speed of the conventional CMOS
transistors having similar feature size.
BiMOS-E are broadbased bipolar transistors that have high
transconductance, gains more constant with current level, sta-
ble “precision” base-emitter offset voltages and superior drive
capability. Excellent interface with environmental potentials
enable use in 5V logic systems and future 3.3V logic systems.
Refer to Application Note AN8811.
ESD capability exceeds the standard 2000V level. The
CA5470 series can operate with single supply voltages from
3V to 16V or ±1.5V to ±8V. They have guaranteed specifica-
tions at both 5V and ±7.5V at room temperature as well as
over the full -55oC to 125oC military range.
Ordering Information
PART NUMBER
(BRAND)
CA5470E
CA5470M
(5470)
CA5470M96
(5470)
TEMP.
RANGE (oC)
PACKAGE
-55 to 125 14 Ld PDIP
-55 to 125 14 Ld SOIC
-55 to 125 14 Ld SOIC Tape
and Reel
PKG.
NO.
E14.3
M14.15
M14.15
Pinout
CA5470 (PDIP, SOIC)
TOP VIEW
OUTPUT 1 1
14 OUTPUT 4
NEG. INPUT 1 2
POS. INPUT 1 3
1 4 13 NEG. INPUT 4
- ++ -
12 POS. INPUT 4
V+ 4
11 V-
POS. INPUT 2 5
NEG. INPUT 2 6
10 POS. INPUT 3
- ++ -
2 3 9 NEG. INPUT 3
OUTPUT 2 7
8 OUTPUT 3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-156
File Number 1946.3

1 page




CA5470 pdf
CA5470
Typical Performance Curve
VS = ±7.5V
14
12
10
8
6
4 V+ = 5V, V- = 0V
2
10K 100K
1M 10M
FREQUENCY
100M
FIGURE 1. MAXIMUM OUTPUT VOLTAGE SWING vs FREQUENCY
Metallization Mask Layout
Dimensions in parentheses are in millimeters and
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).
The layout represents a chip when it is part of the
wafer. When the wafer is cut into chips, the cleavage
angles are 57o instead of 90o with respect to the face
of the chip. Therefore, the isolated chip is actually 7
mils (0.17mm) larger in both dimensions.
0
97.2
90
80
70
60
50
40
30
20
10
0
10 20 30 40 50 60 69.7
97.2
(2.46)
69.7
(1.77)
3-160

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