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PDF FQF8N60 Data sheet ( Hoja de datos )
| Número de pieza | FQF8N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | AUDLEY | |
| Logotipo |  |
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HIGH VOLTAGE N-Channel MOSFET
FQ F8 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 40nC (Typ.)
□ BVDSS=600V,ID=7.5A
□ RDS(on) :1.32 Ω (Max) @VG=10V
□ 100% Avalanche Tested
GD S
G!
D
!
●
◀▲
●
●
!
S
TO‐220F
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
FQ F8 N60
600
7.5*
4.7*
±30
420
7.5
48
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
2.6
62.5
Units
℃/W
℃/W
1
1 page  
HIGH VOLTAGE N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FQF8N60.PDF ] | |
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