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PDF SP8M6 Data sheet ( Hoja de datos )

Número de pieza SP8M6
Descripción Switching Transistors
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! SP8M6 Hoja de datos, Descripción, Manual

Transistors
Switching
SP8M6
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
SP8M6
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
0.4±0.1
1.27 0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 30
20 20
±5.0 ±3.5
±20 ±14
1.6 1.6
20 14
2
150
55 to +150
Unit
V
V
A
A 1
A
A 1
W 2
°C
°C
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/5

1 page




SP8M6 pdf
Transistors
P-ch
zElectrical characteristic curves
10000
Ta=25°C
f=1MHz
VGS=0V
1000
Ciss
100
Coss
Crss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1000
100
td (off)
tf
Ta=25°C
VDD= −15V
VGS= −10V
RG=10
Pulsed
td (on)
10
tr
1
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
SP8M6
8
Ta=25°C
7 VDD= −15V
ID= −3.5A
6 RG=10
Pulsed
5
4
3
2
1
0
012345678
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
400
Ta=25°C
350 Pulsed
300
ID=−3.5A
250 ID=−1.75A
200
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VGS=0V
Pulsed
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −10V
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4.5V
Pulsed
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −4V
Pulsed
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
0.1 1 10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.A
5/5

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