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PDF CJMNP517 Datasheet ( Hoja de datos )

Número de pieza CJMNP517
Descripción N-Channel + P-Channel MOSFET
Fabricantes JCET 
Logotipo JCET Logotipo

Total 6 Páginas
		
CJMNP517 Hoja de datos, Descripción, Manual
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS
CJMNP517 N Channel +P Channel MOSFET
V(BR)DSS
12 V
-12V
RDS(on)MAX
24mΩ@10V 
  27mΩ@4.5V 
42mΩ@ 2.5V 
72mΩ@1.8V  
  45mΩ@-4.5V 
60mΩ@-2.5V 
90mΩ@-1.8V  
ID
6A
-4.1A
DFNWB2X2-6L-U
FEATURE
Surface Mount Package
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-resistance and
Maximum DC Current Capability
APPLICATION
Power Management In Note Book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
P-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
IS
VDS
VGS
ID
IDM
IS
RθJA
TJ
TSTG
TL
Value
12
±12
6
24
6
-12
±12
-4.1
-16.4
-4.1
167
150
-55~+150
260
Unit
V
V
A
A
A
V
V
A
A
A
/W
www.cj-elec.com
1
A-1,Feb,2015

1 page

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A-1,Feb,2015

5 Page



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