(PDF) CJCD2005 Datasheet - Dual N-Channel MOSFET

Número de pieza	CJCD2005
Descripción	Dual N-Channel MOSFET
Fabricantes	JCET
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Hay una vista previa y un enlace de descarga de CJCD2005 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2005 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V ID 8A DFNWB2× -6L-C DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM RθJA Tj Tstg TL Value 20 ±12 8 30 125 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ www.cj-elec.com 1 C,May,2015 1 page DFNWB2X3-6L Tape and Reel www.cj-elec.com 5 C,May,2015 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet CJCD2005.PDF ]

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PDF CJCD2005 Data sheet ( Hoja de datos )