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PDF 2SA1797U Data sheet ( Hoja de datos )
| Número de pieza | 2SA1797U | |
| Descripción | PNP Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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2SA1797U
PNP Silicon Epitaxial Planar Transistor
Medium power transistor
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pw = 20 ms)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
PC
Tj
Tstg
Value
50
50
6
2
3
0.5
150
- 55 to + 150
Unit
V
V
V
A
A
W
℃
℃
Characteristics at Ta = 25℃
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 500 mA
Current Gain Group
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 50 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 50 µA
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Transition Frequency
at -VCE = 2 V, -IC = 500 mA, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol Min.
P hFE
Q hFE
R hFE
-ICBO
82
120
180
-
-IEBO
-
-V(BR)CBO 50
-V(BR)CEO 50
-V(BR)EBO
6
-VCE(sat)
-
fT -
Cob -
Typ.
-
-
-
-
-
-
-
-
-
200
36
Max.
180
270
390
100
100
-
-
-
0.35
-
-
Unit
-
-
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated：31/05/2016 Rev：01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1797U.PDF ] | |
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