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2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y
and G, L , according to its DC current gain. As
complementary type the NPN transistor
2SC1815 is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IB
Ptot
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
50
50
5
150
50
400
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 6 V, -IC = 2 mA
Current Gain Group
at -VCE = 6 V, -IC = 150 mA
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 1 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
O
Y
G
L
Symbol
hFE
hFE
hFE
hFE
hFE
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
fT
COB
Min.
70
120
200
350
25
50
50
5
-
-
-
-
80
-
Max.
140
240
400
700
-
-
-
-
0.1
0.1
0.3
1.1
-
7
Unit
-
-
-
-
-
V
V
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 17/08/2016 Rev:01