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PDF TC55B464J-10 Data sheet ( Hoja de datos )

Número de pieza TC55B464J-10
Descripción SILICON GATE CMOS STATIC RAM
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TC55B464J-10 Hoja de datos, Descripción, Manual

TOSHIBA
1l:55~64P/J-I0/12
SILICON GATE BiCMOS
65,536 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and
operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE).
The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and
outputs are TTL compatible.
The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55B464P/J-10 10ns (max.)
- TC55B464P/J-12 12ns (max.)
• Low power dissipation
- Operation:
- TC55B464P/J-10 140mA (max.)
- TC55B464P/J-12 140mA (max.)
- Standby:
15mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TTL compatible
• Package:
- TC55B464P: DIP24-P-300B
- TC55B464J: SOJ24-P-300A
Pin Names
AO -A15
1/01 - 1/04
CE
WE
Voo
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Power (+5V)
Ground
Pin Connection (Top View)
TCSS8464P
AS Voo
A7 A1S
A6 A14
AS A13
A4 A12
A3 All
A2 A10
Al 1/01
AO 1102
A9 1/03
CE 1/04
GND WE
(DIP)
TCSS8464J
AS Voo
A7 A1S
A6 A14
AS A13
A4 A12
A3 All
A2 Al0
Al 1/01
AO 1102
A9 1/03
CE 1/04
GND WE
(SOJ)
TDSHIBA AMERICA ELECTRDNIC CDMPDNENTS. INC.
8·33

1 page




TC55B464J-10 pdf
Timing Waveforms
Read Cycle (2)
ADDRESSES
Static RAM
TC55B464P/J-10/12
Dour
Write Cycle 1 (WE Controlled Write)
ADDRESSES
UNKNOWN
OUTPUT DATA VALID
twc
UNKNOWN
Dour
DATA STABLE
TOSHIBA AMERICA EL.ECTRONIC COMPONENTS, INC.
8-37

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