PDF TC55BS4258J-12 Data sheet ( Hoja de datos )

Número de pieza	TC55BS4258J-12
Descripción	256K x 4-Bit Synchronous Static RAM
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA 262,144 WORD x 4 BIT SYNCHRONOUS STATIC RAM with Input Registers, Output Registers and Pass-Through Feature 1l:55BS4258]-10/12 PRELIMINARY Description The TC55BS4258J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 262,144 words by 4 bits. The TC55BS4258J has separate data inputs and outputs and a write-cycle pass-through feature. Designed for pipelined architectures, this device has internal input and output registers which latch on the positive edge of an external clock (ClK). All address, data, and control signals are latched. The setup and hold times for the inputs are 2ns and 1ns respectively. Synchronous SRAMs can lead to faster, more robust system operation by virtually eliminating the timing skew problems associated with conventional asynchronous SRAMs. For example, write operations are internally self-timed when initiated - eliminating the need for accurate write pulse generation and timing by the memory controller or microproces- sor. A pass-through feature during write cycles allows the outputs to follow the inputs with a one clock cycle delay. For read cycles, data is available one clock cycle after the address is latched. All inputs and outputs are TIL compatible. The TC55BS4258J is available in a 36-pin, 400mil SOJ package suitable for high density assembly. Features • Fast cycle time - TC55BS4258J-10 10ns (max.) - TC55BS4258J-12 12ns (max.) • Fast clock access time - TC55BS4258J-10 5ns (max.) - TC55BS4258J-12 6ns (max.) • Input and output registers for synchronous operation • Data pass-through for write cycles • Single power supply: 5V ± 10% • Separate data inputs and outputs • Package: JEDEC standard pinout - 36-pin, 400mil SOJ: SOJ36-P-400 Pin Names AD - A17 DO - D3 00-03 ClK CE WE OE Voo GND NC Address Inputs Data Inputs Data Outputs Clock Input Chip Enable Input Write Enable Input Output Enable Input Power (+5V) Ground No Connection Pin Connection (Top View) TC55BS425BJ NC A3 A2 A1 AO CE DO QO VDD GND Q1 01 WE A17 A16 A1S A14 NC A4 AS A6 A7 AS Of 03 Q3 GND VDD Q2 02 CLK A9 A10 A11 A12 At3 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. C-1 1 page Timing Waveforms Read Cycle 1 (OE = Vn) Standby Static RAM Read Read TC55BS4258J-10112 Read Read Cycle 2 (CE = V1J Read Output Disable Read Read PRELIMINARY tACK TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. C-5 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
TC55BS4258J-10	256K x 4-Bit Synchronous Static RAM	Toshiba
TC55BS4258J-12	256K x 4-Bit Synchronous Static RAM	Toshiba

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