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PDF 20N50 Data sheet ( Hoja de datos )
| Número de pieza | 20N50 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
The Nell 20N50 is a three-terminal silicon
device with current conduction capability
of 20A, fast switching speed, low on-state
resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 5 volts.
They are designed for use in applications
such as switched mode power supplies, DC
to DC converters, motor control circuits, UPS
and general purpose switching applications.
D
G
D
S
TO-3PB
(20N50B)
D (Drain)
FEATURES
RDS(ON) = 0.23Ω@VGS = 10V
Ultra low gate charge(60nC max.)
Low reverse transfer capacitance
(CRSS = 27pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
20
500
0.23 @ VGS = 10V
60
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=20A, RGS=50Ω, VGS=10V
dv/dt
Peak diode recovery dv/dt(Note 2)
Total power dissipation
PD (Derating factor above 25°C)
TC=25°C
TJ
TSTG
TL
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
500
500
±30
20
12.4
80
20
25
4.6
280 (2.3)
UNIT
V
A
mJ
V /ns
W(W/°C)
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
101
VGS
Top: 15V
10V
8V
7V
6.5V
6V
Bottorm: 5.5V
100
10-1
10-1
Note:
1. 250µs Pulse Test
2. TC = 25°C
100 101
Drain-Source voltage, VDS (V)
Fig.3 On-Resistance variation vs. drain
current and gate voltage
0.8
20N50 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
102
150ºC
101 25ºC
-55ºC
100
2
Note:
1. VDS = 40V
2. 250µs Pulse Test
4 6 8 10 12
Gate-Source voltage, VGS (V)
Fig.4 Body diode forward voltage variation
vs. Source current and Temperatue
0.6
VGS = 10V
0.4
0.2
0.0
0
VGS = 20V
Note:
TC = 25°C
15 30 45 60 75 90
Drain current, ID(A)
Fig.5 Capacitance characteristics
6000
5000
4000
3000
2000
1000
0
10-1
Coss
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgd
Crss = Cgd
Crss
Ciss
Note:
1. VGS = 0V
2. f = 1 MHz
100 101
Drain-Source voltage, VDC (V)
150ºC
101 25ºC
Note:
1. VGS = 0V
2. 250µs Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
VDS = 100V
VDS = 250V
VDS = 400V
Note: lD = 20A
10 20 30 40
Total gate charge, QG (nC)
50
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 20N50.PDF ] | |
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