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PDF TC518512PL-10LV Data sheet ( Hoja de datos )

Número de pieza TC518512PL-10LV
Descripción SILICON GATE CMOS PSEUDO STATIC RAM
Fabricantes Toshiba 
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No Preview Available ! TC518512PL-10LV Hoja de datos, Descripción, Manual

TOSHIBA
TC518512PL/FL/FIL!fRL70LV/80LV/I0LV
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power
storage. The TC518512PL-LVoperates from a single 3.0V - 5.5V power supply. Refreshing is supported by a refresh (05'RFSH)
input which enables two types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface
with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microproces-
sor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline
package (forward type, reverse type).
Features
• Organization: 524,288 words x 8 bits
• Low voltage operation: 3.0V - 5.5V
• Data retention supply voltage: 3.0V - 5.5V
• Fast access time
TC518512PL-LV Family
crtCEA Access Time
toEA OE Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current 15.5V
Self Refresh Current 1 3.0V
-70
70ns
30ns
115ns
385mW
-80
80ns
30ns
130ns
330mW
2001lA
1001lA
-10
100ns
40ns
160ns
275mW
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PL: DIP32-P-600
- TC518512FL: SOP32-P-525
- TC518512FTL: TSOP32-P-400
- TC518512TRL: TSOP32-P-400A
Pin Names
Al8
Al6
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1101
1102
1103
GNO
Voo
A15
Al7
PJW
Al3
A8
A9
All
O'EIRmi
Aa10
1/08
1107
1/06
1/05
1104
Al8
A16
Al4
Al2
A7
AS
AS
A4
A3
A2
At
AO
1/01
1102
1/03
GNO
AO - A18
RIW
OEii=fFSR
cr
Address Inputs
Read/Write Control Input
Output Enable Input
Refresh Input
Chip Enable Input
1/01 - 1/08
Voo
GND
Data Inputs/Outputs
Power
Ground
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
D-185

1 page




TC518512PL-10LV pdf
Static RAM
TC518512Pl/FLlFTlfTRl·70lV180lV11 OlV
3.3V Operation
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo
V1H
V1L
Power Supply Voltage
Input High Voltage
Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
3.0 3.3 3.6
-Voo - 0.2V
Voo + 1. 0
--0.5 0.2
V
V
V
2
DC Characteristics (Ta = 0 - 700C, Voo =3.3V±O.3V)
SYMBOL
PARAMETER
1000
100S2
IOOF2
100F3
100F4
II(L)
10(L)
VOH
VOL
Operating Current (Average)
cr, Address cycling: tRC = tRC min.
Standby Current
Self Refresh Current (Average)
Auto Refresh Current (Average)
RFSH cycling: tFC = tFC min.
cr only Refresh Current (Average)
cr, Address cycling: tRC = tRC min.
Input Leakage Current
OV ~ V1N ~ Voo, All other Inputs not under test = OV
Output Leakage Current
Output Disabled, OV ~ VOUT ~ Voo
Output High Level,
10H = -1 OOIlA
Output Low Level,
10L = 1001lA
MIN. TYP. MAX. UNIT NOTES
- 15 20 mA 3,4
- - 100 IlA
- 50 100 IlA
- - 20 mA 3
- - 20 mA 3
- - ±10 IlA
- - ±10 IlA
Voo - O.2V - - V
- - 0.2 V
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
0·189

5 Page





TC518512PL-10LV arduino
CE Only Refresh
Static RAM
TC518512PLlFL/FTLITRL-70LV/80LV/10LV
VIH
AO - A10 Vil
VIH------~lo=s=c ==~~------------------------------------+-------~~b--
Vil - _ _ _ _"'"!""'--'
VIH_~--~~==~~------------------------------------1tR!C~H ~~-------
R/W Vil --_______--'
VOH-
1101-1/08 VO - - - - - - - - - - - - - - - - - -
OPEN
l
Note: A11 - A18 = VIH or VIL
~:HorL
Auto Refresh
Vil -;"'-'_ _J
1/01-1/08 VO H - _ _ _ _ _ _ _ _ _ _ _ __
VOL -
Note: RIW, AD - A18 = VIH or VIL
Self Refresh
VIH -
~ Vil -
1 tSEI2 .1
OPEN
VIH -
mJWRR Vil _
~-----'
II01-V08 VOH-_________________________
VOL -
Note: RIW, AD - A18 = VIH or VIL
OPEN
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
0-195

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