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PDF 18NM65 Data sheet ( Hoja de datos )
| Número de pieza | 18NM65 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
18NM65
18A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 18NM65 is a high voltage super junction MOSFET
and is designed to have better characteristics.
The UTC 18NM65 Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and
reliability. such as low gate charge, low on-state resistance and
have a high power density and high rugged avalanche
characteristics. This super junction MOSFET usually used at
AC/DC power conversion, and industrial power applications.
FEATURES
* RDS(ON) < 0.33Ω @ VGS=10V, ID=9.0A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18NM65L-TA3-T
18NM65G-TA3-T
18NM65L-TF1-T
18NM65G-TF1-T
18NM65L-TF2-T
18NM65G-TF2-T
18NM65L-TF3-T
18NM65G-TF3-T
18NM65L-TM3-T
18NM65G-TM3-T
18NM65L-TN3-R
18NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-070.H
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18NM65
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-070.H
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 18NM65.PDF ] | |
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