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PDF 2N5551 Data sheet ( Hoja de datos )

Número de pieza 2N5551
Descripción Amplifier Transistors
Fabricantes Motorola Semiconductors 
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No Preview Available ! 2N5551 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140 160
160 180
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N5550
2N5551
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5550
2N5551
2N5550
2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2N5550
2N5551*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
140
160
160
180
6.0
ICBO
IEBO
Max Unit
Vdc
Vdc
— Vdc
100 nAdc
50
100 µAdc
50
50 nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

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2N5551 pdf
1000
500
300
200
tr @ VCC = 30 V
100
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
50 td @ VEB(off) = 1.0 V
30 VCC = 120 V
20
10
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
100 200
2N5550 2N5551
5000
3000
tf @ VCC = 120 V
IC/IB = 10
TJ = 25°C
2000
tf @ VCC = 30 V
1000
500
300 ts @ VCC = 120 V
200
100
50
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
100 200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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