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PDF P1203BVA Data sheet ( Hoja de datos )
| Número de pieza | P1203BVA | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement P1203BVA
Mode Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ
ID
11A
D
G
S
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
11
7
40
28
40
2.5
1
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V ID = 11A
30
1.2
40
1.5 3
V
±100 nA
1
µA
10
A
14 17.5
mΩ
9.6 12
40 S
REV 0.93
Sep-13-2011
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P1203BVA.PDF ] | |
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