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PDF PA520BA Data sheet ( Hoja de datos )
| Número de pieza | PA520BA | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
PA520BA
Field Effect Transistor
SOT-23-6
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ
ID
6A
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Curren
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
G: GATE
D: DRAIN
S: SOURCE
LIMITS
±20
6
4.7
30
17
15
1.1
0.7
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
Junction-to-Ambient2
RθJC
RθJA
40
°C / W
110
1Pulse width limited by maximum junction temperature.
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 6A
30
1 1.4 2.5
V
±100 nA
1
µA
10
15.3 20
18.2 25
mΩ
41 S
REV 0.9
Feb-22-2012
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PA520BA.PDF ] | |
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