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Número de pieza | P0403BK | |
Descripción | N-Channel Field Effect Transistor | |
Fabricantes | NIKO-SEM | |
Logotipo | ||
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N-Channel Enhancement Mode Field
Effect Transistor
P0403BK
NPAK SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 4.0mΩ
ID
35A
D
G
D DDD
G : GATE
D : DRAIN
S : SOURCE
S #1 S S S G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
Power Dissipation
Junction & Storage Temperature Range
L = 0.1mH
L = 0.05mH
TC = 25 °C
TC = 70 °C
IAR
EAS
EAR
PD
Tj, Tstg
LIMITS
30
±20
35
26
50
25
31.5
1.0
4.0
2.5
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
31
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 5.0V, ID = 22A
VGS = 10V, ID = 27A
VDS = 15V, ID = 27A
LIMITS
UNIT
MIN TYP MAX
30
1 1.5 3.0
V
±100 nA
1
μA
10
5.0 6.8
3.5 4.0 mΩ
85 S
1 Apr-02-2007
1 page NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P0403BK
NPAK SOP-8
Lead-Free
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-2
10-1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1 t2
1. Duty Cycle, D=
t1
t2
2. Per Unit Base = RthJA = 31° CW
3. TJM - TA =PDMZthJA(t)
4. Surface Mounted
10 100
600
5 Apr-02-2007
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet P0403BK.PDF ] |
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