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PDF BLM8811 Data sheet ( Hoja de datos )
| Número de pieza | BLM8811 | |
| Descripción | Dual N-Channel Power MOSFET | |
| Fabricantes | BELLING | |
| Logotipo |  |
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BLM8811
12V, 21A, 5.5mΩ, Dual N-Channel Power MOSFET
Features
2.5V drive
Internal protection diode
Common-drain type
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Source to Source Voltage
Symbol
VSSS
Conditions
Gate to Source Voltage
VGSS
Source Current (DC)
Source Current (Pulse)
IS
ISP PW100s, duty cycle1%
Total Dissipation
Junction Temperature
PT When mounted on ceramic substrate
(5000mm20.8mm)
Tj
Storage Temperature
Tstg
Value
12
8
21
100
2.5
Unit
V
V
A
A
W
150
- 55 to +150
C
C
Note: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are
exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(5000mm2 X 0.8mm)
Symbol
RJA
Value
60
Unit
C /W
Electrical Characteristics at Ta 25C
Parameter
Symbol
Conditions
Source to Source Breakdown
Zero-Gate Voltage Source
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
IS=1mA, VGS=0V
VSS=10V,
VGS=±8V,
VSS=6V, IS=1mA
VSS=6V, IS=3A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
12
0.5
Value
typ
19
max
1
5
1.3
Uni
t
V
A
A
V
S
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BLM8811.PDF ] | |
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