(PDF) P2610BS Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P2610BS
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2610BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ @VGS = 10V ID 36A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 70 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 1.5 UNITS °C / W REV1.0 1 2014/10/24 1 page P2610BS N-Channel Enhancement Mode MOSFET REV1.0 5 2014/10/24 5 Page

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PDF P2610BS Data sheet ( Hoja de datos )