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PDF PD548BA Data sheet ( Hoja de datos )
| Número de pieza | PD548BA | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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PD548BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.6mΩ @VGS = 10V
ID
85A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
85
54
170
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
59
23
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature,
Package limitation current is 40A.
MAXIMUM UNITS
2.1
°C / W
62.5
REV 1.0
1 2013-11-25
1 page  
PD548BA
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2013-11-25
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PD548BA.PDF ] | |
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