(PDF) P2503BDG Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P2503BDG
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2503BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 25mΩ @VGS = 10V ID 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 12 10 30 Avalanche Current IAR 10 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH EAS EAR 5 0.625 Power Dissipation TC = 25 °C TC = 100 °C PD 32 22 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤1% SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.9 75 UNITS °C / W Ver 1.1 1 2013-3-21 1 page P2503BDG N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-21 5 Page

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PDF P2503BDG Data sheet ( Hoja de datos )