(PDF) P1603BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1603BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 14mΩ @VGS = 10V ID 40A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 40 32 150 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 26 Power Dissipation TC= 25 °C TC= 100°C PD 42 27 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 62.5 UNITS °C / W REV 1.0 1 2014/5/8 1 page P1603BD N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/8 5 Page

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PDF P1603BD Data sheet ( Hoja de datos )