(PDF) P1003BDF Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1003BDF
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC= 25 °C TC= 100 °C ID IDM 62 39 120 Avalanche Current IAS 29 Avalanche Energy L=0.1mH EAS 43 Power Dissipation TC= 25 °C TC= 100°C PD 73 29 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 52A. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.7 °C / W REV 1.0 1 2014/5/12 1 page P1003BDF N-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/12 5 Page

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PDF P1003BDF Data sheet ( Hoja de datos )