(PDF) P0703ED Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P0703ED
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P0703ED P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -68 -43 -160 Avalanche Current IAS -65 Avalanche Energy L=0.1mH EAS 214 Power Dissipation TC= 25 °C TC= 100°C PD 60 24 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2The maximum current rating is package limited. SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.08 °C / W REV 1.0 1 2014/5/9 1 page P0703ED P-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/9 5 Page

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PDF P0703ED Data sheet ( Hoja de datos )