(PDF) P1203BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1203BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1203BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 48A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 48 30 144 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C TC = 100 °C PD 44 17 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.8 °C / W Ver 1.1 1 2014/5/26 1 page P1203BD N-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 Ver 1.1 5 2014/5/26 5 Page

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PDF P1203BD Data sheet ( Hoja de datos )