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Número de pieza | P1210BK | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID
40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
40
26
110
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
12
9.4
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 200
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
40
20
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4.1
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
30
55
Junction-to-Case
Steady-State
RqJC
2.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.0
1 2015/10/14
1 page P1210BK
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2015/10/14
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet P1210BK.PDF ] |
Número de pieza | Descripción | Fabricantes |
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