(PDF) P0903BKB Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P0903BKB
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P0903BKB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 49 31 120 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 9.8 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 42 TC = 25 °C 35 Power Dissipation TC = 100 °C TA = 25 °C PD 14 2.2 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C Ver 1.0 1 2012/4/16 1 page P0903BKB N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16 5 Page

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PDF P0903BKB Data sheet ( Hoja de datos )