(PDF) CL616BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	CL616BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! CL616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.9mΩ @VGS = 10V ID 50A PDFN 5X 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 50 31.5 120 Continuous Drain Current TA = 25 °C TA = 70 °C ID 13 10.5 Avalanche Current IAS 24 Avalanche Energy L =0.1mH EAS 28.5 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 Power Dissipation TA = 25 °C TA = 70 °C PD 2.2 1.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 57 Junction-to-Case RqJC 4 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2013-12-19 1 page CL616BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2013-12-19 5 Page

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PDF CL616BA Data sheet ( Hoja de datos )