(PDF) PE616BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PE616BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
Logotipo
Hay una vista previa y un enlace de descarga de PE616BA (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! PE616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 36A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 100 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 9.2 Avalanche Current IAS 23 Avalanche Energy L =0.1mH EAS 26.4 TC = 25 °C 16.7 Power Dissipation TC = 100 °C TA = 25 °C PD 6.7 1.7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 75 Junction-to-Case RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.1 1 2016/11/23 1 page PE616BA N-Channel Enhancement Mode MOSFET REV 1.1 5 2016/11/23 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet PE616BA.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF PE616BA Data sheet ( Hoja de datos )