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Número de pieza | PE5E6BA | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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No Preview Available ! PE5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
39A
PDFN 3X3P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
39
25
100
Continuous Drain Current4
TA = 25 °C
TA = 70 °C
ID
16
13
Avalanche Current
IAS 33
Avalanche Energy
L =0.1mH
EAS
54
Power Dissipation
Power Dissipation3
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
17.8
7
3
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t ≦10s
RqJA
40
Junction-to-Ambient2
Steady-State
RqJA
60
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
4Package limitation current is 13A.
UNITS
°C / W
REV 1.0
1 2016/12/22
1 page PE5E6BA
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2016/12/22
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PE5E6BA.PDF ] |
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PE5E6BA | N-Channel Enhancement Mode MOSFET | UNIKC |
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