(PDF) PE526BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PE526BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE526BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ @VGS = 10V ID3 49A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 49 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 31 17 Pulsed Drain Current1 TA= 70 °C IDM 14 50 Avalanche Current IAS 47 Avalanche Energy L =0.1mH EAS 110 TC = 25 °C 16 Power Dissipation TC = 100 °C TA = 25 °C PD 6 2 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 7.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 25A. UNITS °C / W REV 1.0 1 2014-2-28 1 page PE526BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-2-28 5 Page

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PDF PE526BA Data sheet ( Hoja de datos )