(PDF) P1203EEA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P1203EEA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1203EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -40A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±25 TC = 25 °C -40 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -25 -11 -9 -95 45 Avalanche Energy L = 0.1mH EAS 101 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 12 2.2 1.4 -55 to 150 UNITS V A mJ W °C REV1.2 1 2015/8/14 1 page P1203EEA P-Channel Logic Level Enhancement Mode MOSFET REV1.2 5 2015/8/14 5 Page

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PDF P1203EEA Data sheet ( Hoja de datos )