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PDF PE628HT Data sheet ( Hoja de datos )
| Número de pieza | PE628HT | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
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PE628HT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
7.5mΩ @VGS = 10V
Q1 30V
20mΩ @VGS = 10V
ID
39A
21A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
39
24
50
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
14
11
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
21
8.6
Power Dissipation4
TA = 25 °C
TA = 70 °C
PD
2.7
1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1
30
±20
21
13
32
8
6.5
12
7.2
16
6
2.5
1.6
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Q2 Max
Q1 Max
UNITS
Junction-to-Ambient2
t ≦10s
45 50
Steady-State
RqJA
55
77 °C / W
Junction-to-case
Steady-State
RqJC
5.8
7.5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is Q2= 19A , Q1= 5.5A.
4The Power dissipation is based on RqJA t ≦10s value.
REV 1.1 1 2016/3/7
1 page  
PE628HT
Dual N-Channel Enhancement Mode MOSFET
REV 1.1 5 2016/3/7
5 Page 
PE628HT
Dual N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.1 11 2016/3/7
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PE628HT.PDF ] | |
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