(PDF) PB554DY Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PB554DY
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PB554DY Dual Common Drain N-Channel MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 10mΩ @VGS = 4.5V ID 12A PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current3 Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 12 9.8 40 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 61 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 9.5A. UNITS °C / W REV 1.7 1 2015/3/3 1 page PB554DY Dual Common Drain N-Channel MOSFET REV 1.7 5 2015/3/3 5 Page

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PDF PB554DY Data sheet ( Hoja de datos )