(PDF) P1504HV Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	P1504HV
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1504HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 23mΩ @VGS = 10V ID 7A SOP-8 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 100 °C ID IDM 7 4 30 Avalanche Current IAS 28 Avalanche Energy L = 0.1 mH EAS 41 Power Dissipation TA = 25 °C TA= 100°C PD 2 0.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJL RqJA TYPICAL MAXIMUM 25 62.5 UNITS °C / W REV 1.0 1 2014/9/19 1 page P1504HV Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/19 5 Page

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PDF P1504HV Data sheet ( Hoja de datos )