(PDF) P1406BV Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1406BV
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1406BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 12.5mΩ @VGS = 10V ID 12A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 12 10 40 Avalanche Current IAS 39 Avalanche Energy L = 0.1mH EAS 76 Power Dissipation3 TA= 25 °C TA =70 °C PD 4 2.6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 30 Junction-to-Ambient Steady-State RqJA 56 Junction-to-Case Steady-State RqJC 25 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value. UNITS °C / W REV 1.0 1 2017/1/11 1 page P1406BV N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/11 5 Page

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PDF P1406BV Data sheet ( Hoja de datos )