(PDF) P1203EVG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P1203EVG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -12A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -12 -9 A -50 Avalanche Current IAS -43 Avalanche Energy L = 0.1mH EAS 94 mJ Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 W 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS °C / W Ver 1.0 1 2012/4/13 1 page P1203EVG P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13 5 Page

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PDF P1203EVG Data sheet ( Hoja de datos )