(PDF) P6503FMA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P6503FMA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P6503FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 55mΩ @VGS = -10V ID -3.1A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.1 -2.4 -12 Power Dissipation TA = 25 °C TA = 70 °C PD 0.96 0.62 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. MAXIMUM 130 UNITS °C / W REV 1.2 1 2016/1/22 1 page P6503FMA P-Channel Enhancement Mode MOSFET REV 1.2 5 2016/1/22 5 Page

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PDF P6503FMA Data sheet ( Hoja de datos )