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Número de pieza | P2610BD | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P2610BD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! P2610BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ @VGS = 10V
ID
36A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
36
23
80
Avalanche Current
IAS 13.9
Avalanche Energy
L =0.1mH
EAS
9.7
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
31
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature.
MAXIMUM
1.6
62.5
UNITS
°C / W
REV 1.2 1 2016/6/6
1 page P2610BD
N-Channel Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异,不影响电性及Layout。
REV 1.2
5
2016/6/6
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet P2610BD.PDF ] |
Número de pieza | Descripción | Fabricantes |
P2610BD | N-Channel Enhancement Mode MOSFET | UNIKC |
P2610BS | N-Channel Enhancement Mode MOSFET | UNIKC |
P2610BT | N-Channel Field Effect Transistor | NIKO-SEM |
P2610BT | N-Channel Enhancement Mode MOSFET | UNIKC |
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