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PDF CJZM718 Data sheet ( Hoja de datos )
| Número de pieza | CJZM718 | |
| Descripción | N-Channel MOSFET and PNP Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJZM718 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS
CJZM718 N-ch MOSFET and PNP Transistor
V(BR)DSS/BVCEO
20V
-25V
RDS(on)MAX
0.7Ω@4.5V
0.85Ω@2.5V
/
ID/IC
0.5A
-3A
DFNWB3×2-8L-I
&
'
FEATURE
High DC current gain
Low Threshold
Small package DFNWB3x2-8L-I
Including a CJP718 transistor and a CJ1012
MOSFET independently in a package
MARKING:
APPLICATION
Charging circuit
Other power management in portable equipments
Equivalent Circuit
C C SG
8 765
front
back
1 2 34
C E BD
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
N-MOSFET
VDS
VGS
ID
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current - Pulse
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient (note1)
Thermal Resistance from Junction to Ambient (note2)
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature
Value
-25
-25
-7.5
-3
20
±6
0.5
2
1
175
110
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
V
A
V
V
A
A
W
℃/W
℃/W
℃
℃
℃
C,Aug,2016
1 page  
7\SLFDO&KDUDFWHULVWLFV
N-channel Characteristics
5
Ta=25℃
Pulsed
4
3
2
Output Characteristics
5.5V
4.5V
3.5V
2.5V
1
VGS=1.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
DRAIN TO SOURCE VOLTAGE VDS (V)
RDS(ON) —— ID
600
Ta=25℃
Pulsed
500
400
VGS=2.5V
300
200 VGS=4.5V
100
0
100 200 300 400 500 600 700 800
DRAIN CURRENT ID (mA)
500
VDS=16V
Pulsed
400
Transfer Characteristics
300
Ta=100℃
200
Ta=25℃
100
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
GATE TO SOURCE VOLTAGE VGS (V)
500
450
400
350
300
250
200
0
RDS(ON) —— VGS
Ta=25℃
Pulsed
ID=0.6A
2468
GATE TO SOURCE VOLTAGE VGS (V)
10
500
Ta=25℃
Pulsed
100
IS —— VSD
10
1
0.1
0.4
0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
www.cj-elec.com
1.00
0.95
0.90
0.85
0.80
0.75
0.70
1.2 25
5
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE TJ (℃)
125
C,Aug,2016
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CJZM718.PDF ] | |
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